315 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author박원일-
dc.date.accessioned2018-09-03T09:49:29Z-
dc.date.available2018-09-03T09:49:29Z-
dc.date.issued2011-09-
dc.identifier.citationCHEMISTRY OF MATERIALS, Vol.23, No.17 [2011], p3902-3906en_US
dc.identifier.issn0897-4756-
dc.identifier.urihttps://pubs.acs.org/doi/abs/10.1021/cm201188z-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/74721-
dc.description.abstractIn this study, we introduce a new strategy to control silicon nanowire (SiNW) morphology (cone shape and cylindrical shape) by exploiting adatom diffusion at the nanostructured surface. In our approach, by using chemical treatment with a mixture of HF and H(2)SO(4) acids, ordinary flat Si substrates were changed to nanoscale-faceted, corrugated surfaces, accompanied by a transition from a hydrophobic to hydrophilic surface. These nanostructured surfaces enhanced the surface diffusion, which eventually stimulated radial growth to change the NW morphology from a cylindrical shape to a cone shape with a sharp tip. By using site-specific chemical treatment, both cone-shaped and cylindrical-shaped SiNWs could be achieved selectively on the same chip under the same conditions. Furthermore, these shape-controlled SiNWs demonstrated an outstanding antireflection effect over a broad range of wavelengths, as determined by optical measurements and finite-difference time-domain modeling.en_US
dc.description.sponsorshipThis work was supported by a KIST research program (grant no. 2E22121) and by Future-based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029300).en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USAen_US
dc.subjectSi nanowiresen_US
dc.subjectnanoconesen_US
dc.subjectsite-specific controlen_US
dc.subjectantireflection effecten_US
dc.subjectnanoscale diffusionen_US
dc.titleSite-Specific Design of Cone-Shaped Si Nanowires by Exploiting Nanoscale Surface Diffusion for Optimal Photoabsorptionen_US
dc.typeArticleen_US
dc.relation.no17-
dc.relation.volume23-
dc.identifier.doi10.1021/cm201188z-
dc.relation.page3902-3906-
dc.relation.journalCHEMISTRY OF MATERIALS-
dc.contributor.googleauthorYi, Jaeseok-
dc.contributor.googleauthorLee, Dong Hyun-
dc.contributor.googleauthorPark, Won Il-
dc.relation.code2011201833-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidwipark-
dc.identifier.researcherID7402229532-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE