Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정두석 | - |
dc.date.accessioned | 2018-08-31T07:11:56Z | - |
dc.date.available | 2018-08-31T07:11:56Z | - |
dc.date.issued | 2016-07 | - |
dc.identifier.citation | NANOSCALE (2016), v. 8, no. 34, page. 15621-15628 | en_US |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.issn | 2040-3372 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR04072A#!divAbstract | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/74693 | - |
dc.description.abstract | We present 'unusual' resistive switching behaviours in electrochemical metallization (ECM) cells utilizing a dual-layer (SiOx/GeSex: SiOx on GeSex) solid electrolyte (SE). The observed switching behaviour markedly varies with the thickness of the upper SiOx layer and compliance current: (i) monostable switching, (ii) counter-eightwise bipolar switching, and (iii) combination of monostable and eightwise bipolar switching behaviours. Focusing on cases (i) and (iii), electrical and chemical analyses on these chameleonic cells were performed in an attempt to gain clues to the understanding of the observed complexity. The chemical analysis indicated the upper SiOx layer as a chemical potential well for Cu ions-Cu ions were largely confined in the well. This non-uniform distribution of Cu across the SE perhaps hints at the mechanism for the complex behaviour; it may be a 'zero-sum game' between SiOx and GeSex layers, in which the two layers fight over the limited number of Cu atoms/ions. | en_US |
dc.description.sponsorship | D. S. J. acknowledges a Korea Institute of Science and Technology grant (grant no. 2E26691), and C. S. H. acknowledges the support of the Global Research Laboratory Program (2012040157) through the National Research Foundation (NRF) of Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | ATOMIC SWITCH | en_US |
dc.subject | MEMORY CELLS | en_US |
dc.subject | NANOIONICS | en_US |
dc.subject | SYNAPSES | en_US |
dc.subject | BIPOLAR | en_US |
dc.subject | CU | en_US |
dc.title | Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c6nr04072a | - |
dc.relation.journal | NANOSCALE | - |
dc.contributor.googleauthor | Lim, Hyungkwang | - |
dc.contributor.googleauthor | Soni, Rohit | - |
dc.contributor.googleauthor | Kim, Dohun | - |
dc.contributor.googleauthor | Kim, Guhyun | - |
dc.contributor.googleauthor | Kornijcuk, Vladimir | - |
dc.contributor.googleauthor | Kim, Inho | - |
dc.contributor.googleauthor | Park, Jong-Keuk | - |
dc.contributor.googleauthor | Hwang, Cheol Seong | - |
dc.contributor.googleauthor | Jeong, Doo Seok | - |
dc.relation.code | 2016000163 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | dooseokj | - |
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