Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박인성 | - |
dc.date.accessioned | 2018-08-21T02:31:58Z | - |
dc.date.available | 2018-08-21T02:31:58Z | - |
dc.date.issued | 2016-07 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v. 109, NO. 2, Page. 23108-23113 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.4958874 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/74452 | - |
dc.description.abstract | The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeOx interfacial layer (IL) between HfO2 dielectric and Ge substrate in metal/HfO2/GeOx/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeOx IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeOx IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO2 interface. Published by AIP Publishing. | en_US |
dc.description.sponsorship | This work was supported by Basic Science Research Program (Nos. 2012R1A6A1029029 and 2013R1A1A2005181) and Nano Material Technology Development Program (No. 2012M3A7B4034985) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education and the Ministry of Science, ICT & Future Planning. The EELS measurements were done using the UC-EF-TEM installed at Korea Basic Science Institute (Daejeon, Republic of Korea). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | HF | en_US |
dc.title | GeOx interfacial layer scavenging remotely induced by metal electrode in metal/HfO2/GeOx/Ge capacitors | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 109 | - |
dc.identifier.doi | 10.1063/1.4958874 | - |
dc.relation.page | 23108-23113 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Lee, Taehoon | - |
dc.contributor.googleauthor | Jung, Yong Chan | - |
dc.contributor.googleauthor | Seong, Sejong | - |
dc.contributor.googleauthor | Lee, Sung Bo | - |
dc.contributor.googleauthor | Park, In-Sung | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2016003157 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | parkis77 | - |
dc.identifier.researcherID | P-4497-2014 | - |
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