Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2018-08-20T04:39:18Z | - |
dc.date.available | 2018-08-20T04:39:18Z | - |
dc.date.issued | 2016-07 | - |
dc.identifier.citation | NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v. 8, NO.7, Page. 544-548 | en_US |
dc.identifier.issn | 1941-4900 | - |
dc.identifier.issn | 1941-4919 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/nnl/2016/00000008/00000007/art00002 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/74429 | - |
dc.description.abstract | Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be 90 ideally, however, it is difficult to obtain 90 SWA because absorber profile is changed by complicated etching process conditions. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results showed that the variations of normalized image log slope and critical dimension bias depending on SWA were reduced by using PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM. | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Research Program through a National Research Foundation of Korea (NRF) grant funded by Korea government (MEST) (grant no. 2011-0028570). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | EUV Lithography | en_US |
dc.subject | Phase Shift Mask | en_US |
dc.subject | Sidewall Angle | en_US |
dc.subject | Aerial Image | en_US |
dc.subject | Process Window | en_US |
dc.title | Improved Margin of Absorber Pattern Sidewall Angle Using Phase Shifting Extreme Ultraviolet Mask | en_US |
dc.type | Article | en_US |
dc.relation.no | 7 | - |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1166/nnl.2016.2227 | - |
dc.relation.page | 544-548 | - |
dc.relation.journal | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | - |
dc.contributor.googleauthor | Jang, Yong Ju | - |
dc.contributor.googleauthor | Kim, Jung Sik | - |
dc.contributor.googleauthor | Hong, Seongchul | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2016006389 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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