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dc.contributor.author김태환-
dc.date.accessioned2018-07-25T01:53:52Z-
dc.date.available2018-07-25T01:53:52Z-
dc.date.issued2011-05-
dc.identifier.citationIn 5th International Conference on Technological Advances of Thin Films & Coatings, Thin Solid Films 2011 519(15):5257-5259en_US
dc.identifier.issn0040-6090-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0040609011002215?via%3Dihub-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/72820-
dc.description.abstractThe electrical and the optical properties of organic light-emitting devices (OLEDs) fabricated utilizing a 4,4',4 ''-tris(2-methylphenyl-phenylamino)triphenylamine (m-MTDATA) were investigated to clarify the effect of exciplex on their color stabilization and color purity. The electrons combined with the holes at heterointerfaces between the m-MTDATA layer and the 9,10-di(2-naphthyl)anthracene (MADN) and the 4-(dicyanomethylene)-2-methyl-6-(p-dimethyl aminostyryl)-4H-pyran (DCM1) emitting layer (EML) resulted in the formation of the exciplex. The emission peak of the electroluminescence spectra for the OLEDs fabricated utilizing the m-MTDATA layer shifted to a lower energy side in comparison with that of the EML This was due to the interaction of the holes in the m-MTDATA layer and the electrons in the MADN EML Carriers in white OLEDs (WOLEDs) with exciplex emissions existed at the heterointerfaces between the m-MTDATA and the EML because the DCM1 EML was too thin to affect the EL peak related to the m-MTDATA layer. The Commission Internationale de l'Eclairage coordinates of WOLEDs at 9.5 V were (0.33, 0.36), and their maximum current efficiency at 46 mA/cm(2) was 2.03 cd/A.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLANDen_US
dc.subjectOLEDen_US
dc.subjectExciplexen_US
dc.subjectEmission coloren_US
dc.subjectColor stabilizationen_US
dc.subjectColor purityen_US
dc.titleWhite organic light-emitting devices with tunable color emission fabricated utilizing exciplex formation at heterointerfaces including m-MDATAen_US
dc.typeArticleen_US
dc.relation.no15-
dc.relation.volume519-
dc.identifier.doi10.1016/j.tsf.2011.01.171-
dc.relation.page5257-5259-
dc.relation.journalTHIN SOLID FILMS-
dc.contributor.googleauthorLee, Kwang Seop-
dc.contributor.googleauthorChoo, Dong Chul-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2011209470-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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