Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2018-07-03T07:12:13Z | - |
dc.date.available | 2018-07-03T07:12:13Z | - |
dc.date.issued | 2016-06 | - |
dc.identifier.citation | 대한금속·재료학회지, v. 54, NO 6, Page. 455-460 | en_US |
dc.identifier.issn | 1738-8228 | - |
dc.identifier.uri | http://210.101.116.102/journal_korea/detail_01.asp?a_key=3434071# | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/72325 | - |
dc.description.abstract | Increasing the numerical aperture (NA) of an optical system is considered as a resolution enhancing technology. In extreme ultraviolet (EUV) lithography, however, it is hard to use optics with a NA value higher than 0.45 without interference between the incident and reflected light cones at the mask. To avoid this, the incident angle must be increased from 6° to 9°, but the resulting imbalance in reflected EUV light with the different incidence angle, in addition to the mask shadowing effect, can deteriorate the imaging performance of the mask. In this paper, a phase-shifting absorber stack is proposed for high-NA EUVL applications. Aerial image simulation was performed at 0.45NA, an incident angle of 9° and 6× demagnification to compare the imaging properties of a TaBN binary intensity mask with the new TaBN/Mo phase shift mask. The mask 3D effect was mitigated by adopting the phase shifting absorber stack. As a result, image contrast and normalized image log-slope were improved and horizontal-vertical critical dimension bias was significantly decreased. | en_US |
dc.description.sponsorship | 이 논문은 한국 정부 (MSIP)에서 후원하는 한국연구재단(National Research Foundation of Korea, NRF) 의 기초연구사업 (Grant No.2011-0028570)에 의하여 지원되었음 | en_US |
dc.language.iso | ko_KR | en_US |
dc.publisher | 대한금속·재료학회 | en_US |
dc.subject | ceramics | en_US |
dc.subject | deposition | en_US |
dc.subject | optical properties | en_US |
dc.subject | computer simulation | en_US |
dc.subject | phase shift mask (PSM) | en_US |
dc.title | 고 개구수 극자외선 노광 기술용 위상 변위 흡수체 구조의 설계 | en_US |
dc.title.alternative | Optimization of Phase-Shifting Absorber Stack for High-NA EUV Lithography | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 54 | - |
dc.identifier.doi | 10.3365/KJMM.2016.54.6.455 | - |
dc.relation.page | 455-460 | - |
dc.relation.journal | 대한금속·재료학회지 | - |
dc.contributor.googleauthor | 장용주 | - |
dc.contributor.googleauthor | 김정식 | - |
dc.contributor.googleauthor | 홍성철 | - |
dc.contributor.googleauthor | 안진호 | - |
dc.contributor.googleauthor | Jang, Yong Ju | - |
dc.contributor.googleauthor | Kim, Jung Sik | - |
dc.contributor.googleauthor | Hong, Seong Chul | - |
dc.contributor.googleauthor | Ahn, Jin Ho | - |
dc.relation.code | 2016018727 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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