Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오새룬터 | - |
dc.date.accessioned | 2018-06-28T02:37:39Z | - |
dc.date.available | 2018-06-28T02:37:39Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v. 38, No. 5, Page. 580-583 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/7875466/ | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/72258 | - |
dc.description.abstract | We propose an experimental method to decompose the positive gate-bias stress (PBS)induced threshold voltage shift (Delta V-th) of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) into the contributions of distinct degradation mechanisms. Topgate self-aligned coplanar structure TFTs are used for this letter. Stress-time-divided measurements, which combine the subgap density-of-states (DOS) extraction and the analysis on recovery characteristics, are performed to separate the Delta V-th components. Change in excess oxygen (O-ex)-related DOS is clearly observed, and Delta V-th by PBS is quantitatively decomposed into the contributions of the active O-ex, and the deep and shallow gate insulator traps. The quantitative decomposition of PBS-induced Delta V-th provides physical insight and key guidelines for PBS stability optimization of a-IGZO TFTs. | en_US |
dc.description.sponsorship | This work was supported in part by LG Display Company, in part by the National Research Foundation of Korea through the Korean Government (MSIP) under Grant 2016R1A5A1012966 and Grant 2015M3D1A1068061, in part by SILVACO, and in part by the IC Design Education Center. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Positive bias stress (PBS) | en_US |
dc.subject | InGaZnO thin-film transistor | en_US |
dc.subject | self-aligned coplanar structure | en_US |
dc.title | Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 38 | - |
dc.identifier.doi | 10.1109/LED.2017.2681204 | - |
dc.relation.page | 580-583 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Choi, Sungju | - |
dc.contributor.googleauthor | Jang, Juntae | - |
dc.contributor.googleauthor | Kang, Hara | - |
dc.contributor.googleauthor | Baeck, Ju Heyuck | - |
dc.contributor.googleauthor | Bae, Jong Uk | - |
dc.contributor.googleauthor | Park, Kwon-Shik | - |
dc.contributor.googleauthor | Yoon, Soo Young | - |
dc.contributor.googleauthor | Kang, In Byeong | - |
dc.contributor.googleauthor | Oh, Saeroonter | - |
dc.contributor.googleauthor | Kim, Dong Myong | - |
dc.contributor.googleauthor | Choi, Sung-Jin | - |
dc.contributor.googleauthor | Kim, Yong-Sung | - |
dc.contributor.googleauthor | Kim, Dae Hwan | - |
dc.relation.code | 2017000338 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | sroonter | - |
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