Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2018-06-27T01:59:37Z | - |
dc.date.available | 2018-06-27T01:59:38Z | - |
dc.date.issued | 2017-07 | - |
dc.identifier.citation | JOURNAL OF CHEMICAL PHYSICS, v. 146, No. 5, Article no. 052821 | en_US |
dc.identifier.issn | 0021-9606 | - |
dc.identifier.issn | 1089-7690 | - |
dc.identifier.uri | https://aip.scitation.org/doi/abs/10.1063/1.4975083 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/72235 | - |
dc.description.abstract | Atomic-layer-deposited La2O3 films were grown on Si with different O-3 pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. Longer pulse time of O-3 formed the solid SiO2 interfacial barrier layer, which suppressed La-silicate formation. Meanwhile, the carboxyl compound acting as an impurity phase was replaced with LaCO3 on increasing the O-3 pulse time due to further oxidation and reaction of La. Higher growth temperatures enhanced La-silicate formation by mixed diffusion of Si and La2O3, during which most of the La2O3 phase was consumed at 400 degrees C. C and N impurities decreased with increasing growth temperature and completely disappear at 400 degrees C. Published by AIP Publishing. | en_US |
dc.description.sponsorship | We thank Dr. M. Rousseau, Dr. D. Shenai, Dr. X. Liu, Dr. H. Yi, and Dr. J. Suydam at Dow Chemistry for La-formidinate precursor and Dr. P. Sivasubramani for his XPS work. This work was partly supported by the Future Semiconductor Device Technology Development Program (Grant No. 10045216) funded through KEIT (Korea Evaluation Institute Of Industrial Technology) by MOTIE (Ministry of Trade, Industry & Energy) and COSAR (Consortium of Semiconductor Advanced Research), and the IT R&D program of MOTIE/KEIT (Grant No. 10048933), and Basic Science Research Program through the NRF (National Research Foundation) of Korea funded by the MSIP (Ministry of Science, ICT & Future Planning) (No. 2015R1A5A1037548). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | RAY PHOTOELECTRON-SPECTROSCOPY | en_US |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | en_US |
dc.subject | ELECTRICAL CHARACTERISTICS | en_US |
dc.subject | BINDING-ENERGY | en_US |
dc.subject | GATE OXIDES | en_US |
dc.subject | HFO2 FILMS | en_US |
dc.subject | IN-SITU | en_US |
dc.subject | XPS | en_US |
dc.subject | PRECURSOR | en_US |
dc.subject | CONTAMINATION | en_US |
dc.title | Impurity and silicate formation dependence on O-3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 146 | - |
dc.identifier.doi | 10.1063/1.4975083 | - |
dc.relation.page | 52821-52825 | - |
dc.relation.journal | JOURNAL OF CHEMICAL PHYSICS | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.contributor.googleauthor | Byun, Young-Chul | - |
dc.contributor.googleauthor | Wallace, Robert M | - |
dc.contributor.googleauthor | Kim, Jiyoung | - |
dc.relation.code | 2017000313 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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