Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 엄석기 | - |
dc.date.accessioned | 2018-05-25T05:49:15Z | - |
dc.date.available | 2018-05-25T05:49:15Z | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | THIN SOLID FILMS, v. 606, Page. 63-73 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0040609016002200?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/71514 | - |
dc.description.abstract | Single-layer undoped and 10 mol% molybdenum(Mo)-doped vanadiumoxide (V2O3) thin films with thicknesses of approximately 342 nm are fabricated by an aqueous sol-gel method and then deposited onto 316L stainless steel conductive substrates. The influence of various annealing temperatures (in a nitrogen atmosphere) on the structural and electrical properties of undoped and Mo-doped vanadium oxide thin films is investigated. Through a controlled annealing process, the electrical resistances of the single-layer thin films are optimized to attain the required amount of Joule heating for cold-start fuel cell applications within an ambient temperature range (273.15 to 253.15 K). The films show a negative temperature coefficient (NTC) behavior and a transition from a metal to an insulator at sub-zero temperatures. The highest electrical resistivities are measured to be 0.032 Omega.cm and 0.071 Omega.cm for undoped and Mo-doped vanadium oxide films, respectively, after annealing under 20 sccm N-2 at 673.15 K. Consequently, the equilibrium surface temperature of the single-layer Mo-doped vanadiumoxide thin film increases from 253.15 K to 299.46 K upon induced Joule heating at a current density of 0.1 A.cm(-2). Thus, it is concluded that single-layer NTCMo-doped vanadium oxides can be effectively used for cold-start fuel cell applications. (C) 2016 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This study was supported by the New & Renewable Energy Program of the Korean Institute of Energy Technology Evaluation and Planning (KETEP) and received financial resources from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 2011T100100314 & No. 20143010031880). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Annealing effects | en_US |
dc.subject | Mo-doped vanadium oxide films | en_US |
dc.subject | Metallic bipolar plates | en_US |
dc.subject | Negative temperature coefficient | en_US |
dc.subject | Joule heating | en_US |
dc.subject | Fuel cell applications | en_US |
dc.title | Synthesis, characterization, and transport properties of single-layer pure and molybdenum-doped vanadium oxide thin films on metallic conductive substrates | en_US |
dc.type | Article | en_US |
dc.relation.volume | 606 | - |
dc.identifier.doi | 10.1016/j.tsf.2016.03.036 | - |
dc.relation.page | 63-73 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Karthikeyan, Muthukkumaran | - |
dc.contributor.googleauthor | Um, Sukkee | - |
dc.relation.code | 2016003143 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MECHANICAL ENGINEERING | - |
dc.identifier.pid | sukkeeum | - |
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