The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates
- Title
- The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates
- Author
- 박진성
- Keywords
- Materials; Metals; Diffusion; Condensed matter properties; Metallurgy; Buffer layers; Solids; Semiconductors; Thin film deposition; Thin films
- Issue Date
- 2014-02
- Publisher
- AMERICAN INSTITUTE OF PHYSICS
- Citation
- Applied Physics Letters, Vol.104 No.6 [2014], 063508
- Abstract
- We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiNx/AlOx buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiNx or SiOx buffer layers. The substrates could be bent down to a radius of curvature of 15mm and the devices remained normally functional. (C) 2014 AIP Publishing LLC.
- URI
- https://aip.scitation.org/doi/10.1063/1.4864617https://repository.hanyang.ac.kr/handle/20.500.11754/70711
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4864617
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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