Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)ELECTRONIC ENGINEERING(융합전자공학부)Articles
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dc.contributor.author유창재-
dc.date.accessioned2018-04-25T21:13:04Z-
dc.date.available2018-04-25T21:13:04Z-
dc.date.issued2011-12-
dc.identifier.citation, Page. 159-162en_US
dc.identifier.issn1883-2490-
dc.identifier.urihttp://ddlab.hanyang.ac.kr/inner_image/publication/proceeding/232.pdf-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/70551-
dc.description.abstractWe investigate an effect of nano-scale structures onto an insulating layer in organic thin-film transistor (OTFT). The electrical performance of OTFT could be improved by using source/drain nano-scalestructures. The nano-scale structure reduces the contact resistance and thus improves the device performances.en_US
dc.publisherImage Information and Television Engineers, Society for Information Displayen_US
dc.titleImprovement of the Field Effect Mobility by the Nano-scale Strusture on Organic Thin Film Transistoren_US
dc.typeArticleen_US
dc.relation.page159-162-
dc.contributor.googleauthorHyunhak, Jung-
dc.contributor.googleauthorSoo In, Jo-
dc.contributor.googleauthorJong Sun, Choi-
dc.contributor.googleauthorChang-Jae, Yu-
dc.contributor.googleauthorJae-Hoon, Kim-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidcjyu-
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