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dc.contributor.author박재근-
dc.date.accessioned2018-04-20T01:25:50Z-
dc.date.available2018-04-20T01:25:50Z-
dc.date.issued2011-03-
dc.identifier.citationCurrent Applied Physics, Vol. 11, No. 2, pp. e44-e48en_US
dc.identifier.issn1567-1739-
dc.identifier.issn1878-1675-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1567173911000319?via%3Dihub-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/70229-
dc.description.abstractTwo solution-processable fullerene derivatives (C60TH-Hx and C60TH-Hx-a) were successfully synthesized for organic photovoltaics and n-type thin-film transistors. The best power conversion efficiency (PCE) was observed in a layered structure of P3HT:C60TH-Hx (PCE = 2.44%), which slightly exceeded that of P3HT:PCBM (PCE = 2.39%). We found a very low PCE for P3HT:C60TH-Hx-a (similar to 0.14%) due to the poor solubility of C60TH-Hx-a. In addition, n-type thin-film transistors were fabricated by solution-processing techniques. The measured values of electron mobility in the devices for PCBM, C60TH-Hx, and C60TH-Hx-a were 5.8 x 10(-3), 2.5 x 10(-2), and 8.5 x 10(-4) cm(2) V-1 s(-1), respectively. (C) 2011 Elsevier B. V. All rights reserved.en_US
dc.publisherELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDSen_US
dc.subjectOrganic photovoltaicsen_US
dc.subjectOrganic thin-film transistorsen_US
dc.subjectFullerene derivativesen_US
dc.subjectSolution-processingen_US
dc.subjectPOLYMER SOLAR-CELLSen_US
dc.subjectEFFICIENCYen_US
dc.subjectNETWORKen_US
dc.titleSolution-processable fullerene derivatives for organic photovoltaics and n-type thin-film transistorsen_US
dc.typeArticleen_US
dc.relation.no2-
dc.relation.volume11-
dc.identifier.doi10.1016/j.cap.2010.11.121-
dc.relation.page44-48-
dc.relation.journalCURRENT APPLIED PHYSICS-
dc.relation.code2011216223-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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