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dc.contributor.author정정화-
dc.date.accessioned2018-04-19T10:05:22Z-
dc.date.available2018-04-19T10:05:22Z-
dc.date.issued2013-01-
dc.identifier.citationIET Computers and Digital Techniques, 2013, 7(1), p.11-20en_US
dc.identifier.issn1751-8601-
dc.identifier.urihttp://digital-library.theiet.org/content/journals/10.1049/iet-cdt.2012.0047-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/69689-
dc.description.abstractThree-dimensional-integrated circuits (3D-ICs) bring new issues for power delivery network design because of larger current density and more complicated power delivery paths compared to 2D-IC. The power delivery network consists of power bumps, through-silicon-vias (TSVs), and power wires. IR-drop at each node varies with the number and position of power bumps and TSVs. These three power resources affect IR-drop of 3D-ICs. In this study, the authors propose power delivery network design methodology to optimise power resources wherease IR-drop constraint is satisfied. The simulation results show that the proposed method minimises the number of power bumps and TSVs compared to the conventional method.en_US
dc.language.isoenen_US
dc.publisherIETen_US
dc.subject3D ICSen_US
dc.titlePower bumps and through-silicon-vias placement with optimised power mesh structure for power delivery network in three-dimensional-integrated circuitsen_US
dc.typeArticleen_US
dc.relation.no1-
dc.relation.volume7-
dc.identifier.doi10.1049/iet-cdt.2012.0047-
dc.relation.page11-20-
dc.relation.journalIET COMPUTERS AND DIGITAL TECHNIQUES-
dc.contributor.googleauthorJang, C.-
dc.contributor.googleauthorKim, J.-
dc.contributor.googleauthorAhn, B.-
dc.contributor.googleauthorChong, J.-
dc.relation.code2013003617-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjchong-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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