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dc.contributor.author권오경-
dc.date.accessioned2018-04-16T05:49:04Z-
dc.date.available2018-04-16T05:49:04Z-
dc.date.issued2012-06-
dc.identifier.citationIEEE Transactions on Electron Devices, 2012 59(6), P.1693-1700en_US
dc.identifier.issn0018-9383-
dc.identifier.urihttps://ieeexplore.ieee.org/document/6178785/-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/67990-
dc.description.abstractThis paper presents a CMOS image sensor with 10-bit column-parallel successive approximation analog-to-digital converters (SA-ADCs). The SA-ADC in each column integrates the binary-weighted references instead of using an internal digital-to-analog converter (DAC) to reduce the area. The area of the column 10-bit SA-ADC is 9 mu\m x 425 mu m. The area of the capacitor array in the SA-ADC is reduced to only 2.8% compared with that of a conventional binary-weighted capacitor DAC. In order to reduce the power consumption, the SA-ADC uses the switched power technique. The constant analog-to-digital conversion time and the switched power technique increase the power saving rate as the frame rate decreases. The proposed image sensor has been fabricated using a 0.13-mu m CMOS process. The measured power consumption of the proposed SA-ADC is reduced to 85% and 58% of that in the SA-ADC without the switched power technique at the frame frequencies of 15 and 150 frames/s, respectively.en_US
dc.description.sponsorshipThis work was supported in part by the Image Frontier Center and in part by Samsung Electronics Co., Ltd. for IC fabrication. The review of this paper was arranged by Editor J. R. Tower.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectCMOS image sensoren_US
dc.subjectcolumn-parallel readout architectureen_US
dc.subjectlow-power consumptionen_US
dc.subjectsmall-area successive approximation analog-to-digital converter (SA-ADC)en_US
dc.titleA 1.92-Megapixel CMOS Image Sensor With Column-Parallel Low-Power and Area-Efficient SA-ADCsen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume59-
dc.identifier.doi10.1109/TED.2012.2190936-
dc.relation.page1693-1700-
dc.relation.journalIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.contributor.googleauthorShin, M.-S.-
dc.contributor.googleauthorKim, J.-B.-
dc.contributor.googleauthorKim, M.-K.-
dc.contributor.googleauthorJo, Y.-R.-
dc.contributor.googleauthorKwon, O.-K.-
dc.relation.code2012203864-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidokwon-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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