Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 권오경 | - |
dc.date.accessioned | 2018-04-16T04:26:21Z | - |
dc.date.available | 2018-04-16T04:26:21Z | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | IEEE Transactions on Nanotechnology, 2012 11(2), P.386-389 | en_US |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/6082447/ | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/67849 | - |
dc.description.abstract | Ideal nanowire transistors exhibit saturation and square-law behavior in their output characteristics. The current saturation above the pinch-off voltage is an essential characteristic for transistors to be applied to a display device that is required to produce a consistent level of brightness even during long operation periods. However, fabricated oxide nanowire transistors exhibit three representative output characteristics-metallic, linearly increasing, and saturated curves-within ameasurable range. In this study, through experiments and simulations using In2O3 nanowire transistors, we show that fewer oxygen vacancies in the nanowire produce output characteristics more similar to ideal MOSFET characteristics. This result indicates that differences in electrical characteristics of the nanowire transistor are derived from the difference in the number of oxygen vacancies in the oxide nanowire. | en_US |
dc.description.sponsorship | Manuscript received August 1, 2011; accepted November 2, 2011. Date of publication November 16, 2011; date of current version March 9, 2012. This work was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology under Grant 2011-0019133 and Grant 2011K000627. The review of this paper was arranged by Associate Editor C. Zhou. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | Nanowire | en_US |
dc.subject | output characteristics | en_US |
dc.subject | saturation | en_US |
dc.subject | square law | en_US |
dc.subject | transistor | en_US |
dc.title | Metallic, Linear, and Saturated Output Characteristics of Oxide Nanowire Transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1109/TNANO.2011.2175404 | - |
dc.relation.page | 386-389 | - |
dc.relation.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Kim, H. | - |
dc.contributor.googleauthor | Kwag, P.-S. | - |
dc.contributor.googleauthor | Lee, S. | - |
dc.contributor.googleauthor | Kwon, O.-K. | - |
dc.contributor.googleauthor | Ju, S. | - |
dc.relation.code | 2012214111 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | okwon | - |
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