Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors
- Title
- Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors
- Author
- 백운규
- Keywords
- LOW-TEMPERATURE FABRICATION; ELECTRONICS; NANOSCALE
- Issue Date
- 2012-03
- Publisher
- Amer INST Physics
- Citation
- Journal of Applied Physics Letters, 2012, 100(10), 102108
- Abstract
- This paper explores transport in transparent thin film transistors formed using a liquid precursor to indium zinc oxide, delivered to target substrates by electrohydrodynamic jet (e-jet) printing. Under optimized conditions, we observe field effect mobilities as high as 32 cm(2) V(-1)s(-1), with on/off current ratios of 10(3) and threshold voltages of 2 V. These results provide evidence that material manipulated in fine-jet, electric field induced liquid flows can yield semiconductor devices without any adverse effects of residual charge or unintentional doping. E-jet printing methods provide levels of resolution (similar to 1.5 mu m) that provide a path to printed transistors with small critical dimensions. (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.3691177]
- URI
- https://aip.scitation.org/doi/10.1063/1.3691177http://hdl.handle.net/20.500.11754/67766
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3691177
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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