Si/Ge Double-Layered Nanotube Array as a Lithium Ion Battery Anode

Abstract

This paper describes the Si/SiO2 etching process using PMER as an etching mask because PMER structure is stable in etchant solution. To reduce the cost and the process time, I used wet chemical etching process instead of plasma dry etching. PMER formed on Si or SiO2 layer was patterned by photo-lithography process. Si etching process using PMER etching mask caused abnormal etching structure regularly, and I proposed the new process using this result. I also have investigated the Si surface after the anisotropic etching process using KOH etchant with ethanol. This process improve the surface of etching structure compare with using KOH etchant with IPA. To propose the application of structure fabricated by etching process, I made ZnS particle. H2O2 treatment transformed ZnS particle into ZnS/ZnO complex particle. In liquid phase, ZnS/ZnO complex particle was tried to deposit on Si wafer coexistent with SiO2 pattern. In the result, ZnS/ZnO complex particle was selectively deposited on SiO2.