Electrical stabilities and memory mechanisms of organic bistable devices fabricated utilizing a poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) layer with a poly(methyl methacrylate) buffer layer
- Title
- Electrical stabilities and memory mechanisms of organic bistable devices fabricated utilizing a poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) layer with a poly(methyl methacrylate) buffer layer
- Author
- 김태환
- Keywords
- Materials; Materials fabrication; Condensed matter properties; Materials properties; Electrical properties; Data storage and retrieval; Laser applications; Organic materials; Buffer layers; Semiconductors
- Issue Date
- 2012-05
- Publisher
- American Institute of Physics
- Citation
- APPLIED PHYSICS LETTERS, Vol.100, No.18 [2012], p183303-1 ~ 183303-3
- Abstract
- Organic bistable devices (OBDs) based on a poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer with a poly(methyl methacrylate) (PMMA) buffer layer were fabricated on indium-tin-oxide (ITO)-coated polyethylene terephthalate (PET) flexible substrates. Current-voltage curves for the Al/PEDOT:PSS/PMMA/ITO/PET device showed current bistabilities with an ON/OFF current ratio of 1 × 103, indicative of a significant enhancement of memory storage. The endurance number of the ON/OFF switchings for the OBDs was above 1 × 105 cycles showing high potential applications in read only memory devices. The memory mechanisms for the OBDs on the basis of oxidation and reduction operations were attributed to the filament processes.
- URI
- http://aip.scitation.org./doi/10.1063/1.4709399http://hdl.handle.net/20.500.11754/67027
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4709399
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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