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dc.contributor.author김태환-
dc.date.accessioned2018-04-15T10:19:35Z-
dc.date.available2018-04-15T10:19:35Z-
dc.date.issued2011-08-
dc.identifier.citationJournal of Electrochemical Society, 2011, 158(10), P.J291-J293en_US
dc.identifier.issn0013-4651-
dc.identifier.urihttp://jes.ecsdl.org/content/158/10/J291-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/66788-
dc.description.abstractBlue organic light-emitting devices (OLEDs) were fabricated utilizing fluorescent materials of 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthorlene (BCP), and 1,3-bis(carbazol-9-yl)benzene (mCP). The emitting layer (EML) of the blue OLEDs consisting of a hole buffer layer and a blue fluorescent layer provided the efficient formation of the electron-hole pairs. The maximum luminance of the OLEDs with a BCP-doped MADN/MADN-doped mCP double EML at 10 V was 10,270 cd/m(2), which was much larger than that of blue OLEDs with a single EML. The holes injected from the indium-tin-oxide anode were accumulated at the BCP-doped MADN/MADN-doped mCP and the MADN-doped mCP/BCP heterointerfaces, resulting in the generation of the Coulomb force. The maximum luminance of the blue OLEDs with a double EML significantly increased due to an increase in the recombination rate of the electrons and holes resulting from the existence of the hole-induced Coulomb force. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3615977] All rights reserved.en_US
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2010-0018877).en_US
dc.language.isoenen_US
dc.publisherElectrochemical SOC INCen_US
dc.subjectanodesen_US
dc.subjectbrightnessen_US
dc.subjectbuffer layersen_US
dc.subjectdopingen_US
dc.subjectelectron-hole recombinationen_US
dc.subjectfluorescenceen_US
dc.subjectlight emitting devicesen_US
dc.subjectorganic compoundsen_US
dc.titleLuminance Enhancement Mechanisms for Blue Organic Light-Emitting Devices Utilizing a Double Emitting Layeren_US
dc.typeArticleen_US
dc.relation.no10-
dc.relation.volume158-
dc.identifier.doi10.1149/1.3615977-
dc.relation.page291-293-
dc.relation.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETY-
dc.contributor.googleauthorBang, H.S.-
dc.contributor.googleauthorChoo, D.C.-
dc.contributor.googleauthorKim, T.W.-
dc.relation.code2011205950-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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