Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)ELECTRONIC ENGINEERING(융합전자공학부)Articles
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김태환 | - |
| dc.date.accessioned | 2018-04-15T07:23:33Z | - |
| dc.date.available | 2018-04-15T07:23:33Z | - |
| dc.date.issued | 2011-05 | - |
| dc.identifier.citation | CURRENT APPLIED PHYSICS,Vol.11, No.3 [2011],687-691 | en_US |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.uri | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001555155 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11754/66612 | - |
| dc.description.abstract | A nano-island array of approximately 7-nm-diameter Zn single crystals embedded in a SiO 2 nanowire was created by using electrospinning and electron-beam irradiation. Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, energy dispersive spectroscopy (EDS), and fast-Fourier-transformed electron diffraction patterns showed that Zn nanocrystals were created inside the SiO 2 nanowire. The formation mechanisms of Zn nanoparticles embedded in a SiO 2 nanowire due to the decomposition of ZnO and SiO 2 nanoparticles are described on the basis of the HRTEM images and the EDS profiles. | en_US |
| dc.description.sponsorship | This work was supported by the National Research Foundationof Korea (NRF) grant funded by the Korea government (MEST) (No.R0A-2007-000-20044-0) and also by the Korea Science and EngineeringFoundation through the Quantum Functional SemiconductorResearch Center at Dongguk University. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier Science B.V., Amsterdam. | en_US |
| dc.subject | Nanoparticles | en_US |
| dc.subject | Microstructure | en_US |
| dc.subject | Nanocomposites. | en_US |
| dc.title | Formation mechanisms of a nano-island array of Zn nanocrystals embedded in a SiO(2) nanowire by using electrospinning and electron-beam irradiation | en_US |
| dc.type | Article | en_US |
| dc.relation.no | 3 | - |
| dc.relation.volume | 11 | - |
| dc.identifier.doi | 10.1016/j.cap.2010.11.033 | - |
| dc.relation.page | 687-691 | - |
| dc.relation.journal | CURRENT APPLIED PHYSICS | - |
| dc.contributor.googleauthor | Kim, T.W. | - |
| dc.contributor.googleauthor | Shin, J.W. | - |
| dc.contributor.googleauthor | Lee, J.Y. | - |
| dc.contributor.googleauthor | Ryu, J.T. | - |
| dc.relation.code | 2011216223 | - |
| dc.sector.campus | S | - |
| dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
| dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
| dc.identifier.pid | twk | - |
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