High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method
- Title
- High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method
- Author
- Kwan-San Hui
- Keywords
- Al-doped ZnO; Hydrothermal growth; p-Type; Ammonia-assisted; Nanorods
- Issue Date
- 2012-07
- Publisher
- Elsevier Science B.V., Amsterdam.
- Citation
- Materials letters, 2012, 78, P.180-183
- Abstract
- High quality Al-N co-doped ZnO (AZO:N) nanorods were synthesized using an ammonia-assisted hydrothermal method. The AZO:N nanorods exhibited p-type characteristics according to Hall Effect measurements, revealing low resistivity in the order of 10(-2) Omega cm. At room temperature, the electrical properties of the AZO:N nanorod showed a hole concentration, hole mobility and resistivity of 2.83 x 10(18)-228 x 10(19) cm(-3), 2.19-2.86 cm(2)/Vs, and 1.01-9.58 x 10(-2) Omega cm. respectively. The I-V measurements of the p-n junction (p-AZO:N nanorods/n-Si) showed rectifying I-V characteristics, confirming that these AZO:N nanorods exhibit p-type conductivity. This study opens the possibility of developing highly conducting p-type AZO nanorods for optoelectronic devices. The effect of the ammonia concentration on the structural and electrical properties of AZO:N nanorods is discussed. (c) 2012 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0167577X12004181?via%3Dihubhttp://hdl.handle.net/20.500.11754/66373
- ISSN
- 0167-577X
- DOI
- 10.1016/j.matlet.2012.03.066
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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