Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 장재영 | - |
dc.date.accessioned | 2018-04-14T07:32:19Z | - |
dc.date.available | 2018-04-14T07:32:19Z | - |
dc.date.issued | 2011-01 | - |
dc.identifier.citation | ACS applied materials & interfaces v.3 no.1, | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | http://pubs.acs.org/toc/aamick/3/1/? | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/66100 | - |
dc.description.abstract | We describe the cross linking of poly(4-styrene-sulfonic cid) (PSS) by exposure to ultra violet (UV) light (lambda = 255 nm) under a vacuum. Fourier transform infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) showed that the photo-crosslinking of PSS resulted from coupling between radicals that were generated in the polymer chains by UV excitation.The photo-cross-linkable characteristics of PSS Were employed to fabricate solution-processable, Photopatternable, and conductive PSS-wrapped multiwalled carbon nanotube (MWNT) composite thin films by wrapping MWNTs with PSS in water. During photo-cross-linking, the work function of the PSS-wrapped MWNTs decreased from 4.83 to 4.53 eV following cleavage of a significant number of sulfonic acid groups. Despite the decreased work function of the PSS wrapped MWNTs the photopatterned PSS wrapped MWNTs produced good source/drain electrodes for OFETs, yeilding a mobility (0.134 +/- 0.056 cm(2)/(V s)) for the TIPS-PEN field-effect transistors fabricated using PSS-wrapped MWNTs as source/drain electrodes that was higher the mobility of gold-based transistors (0.01,1 +/- 0.004 cm(2)/(V s)) | en_US |
dc.description.sponsorship | This work was supported by a grant from the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (Grant 2010-0000809). The authors thank the Pohang Accelerator Laboratory for providing the 4B1 beamline (PES II) used in this study. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA | en_US |
dc.relation.ispartofseries | 2011년, pp.74 - 79; | - |
dc.subject | solution-processable | en_US |
dc.subject | photopatternable | en_US |
dc.subject | source/drain electrode | en_US |
dc.subject | carbon nanotube | en_US |
dc.subject | organic field-effect transistor | en_US |
dc.subject | contact resistance | en_US |
dc.title | Photopatternable Poly(4-styrene sulfonic acid)-Wrapped MWNT Thin-Film Source/Drain Electrodes for Use in Organic Field-Effect Transistors | en_US |
dc.type | Article | en_US |
dc.relation.volume | 3 | - |
dc.identifier.doi | 10.1021/am1008826 | - |
dc.relation.page | 74-79 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Hong, Kipyo | - |
dc.contributor.googleauthor | Kim, Se Hyun | - |
dc.contributor.googleauthor | Yang, Chanwoo | - |
dc.contributor.googleauthor | Yun, Won Min | - |
dc.contributor.googleauthor | Nam, Sooji | - |
dc.contributor.googleauthor | Jang, Jaeyoung | - |
dc.contributor.googleauthor | Park, Chanjun | - |
dc.contributor.googleauthor | Park, Chan Eon | - |
dc.relation.code | 2011220214 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ENERGY ENGINEERING | - |
dc.identifier.pid | jyjang15 | - |
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