Full metadata record

DC FieldValueLanguage
dc.contributor.author박진성-
dc.date.accessioned2018-04-14T04:49:42Z-
dc.date.available2018-04-14T04:49:42Z-
dc.date.issued2011-01-
dc.identifier.citationJOURNAL OF THE ELECTROCHEMICAL SOCIETY; 2011, 158 2, pH115-pH118, 4p.en_US
dc.identifier.issn0013-4651-
dc.identifier.urihttp://jes.ecsdl.org/content/158/2/H115-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/66020-
dc.description.abstractWe systematically investigated the role of the SiOx and/or SiONx passivation layer in the amorphous hafnium indium zinc oxide (HIZO) thin film transistors (TFTs) under a negative bias temperature illumination stress (NBTIS) condition. The device instability of the TFTs with a SiOx passivation layer [threshold voltage shift (Delta V-th) similar to -6.5 V] is better than that of the TFTs with a SiONx passivation layer (Delta V-th similar to -8.5 V) in the atmosphere. However, the devices with the SiOx passivation layer showed different instabilities in the atmosphere (-6.5 V) and N-2 ambient (-5.5 V). The film analysis demonstrated the higher water permeability of the SiOx film and higher hydrogen content of the SiONx films, suggesting the existence of not only water related positive charge traps but also hydrogen related positive charge traps under NBTIS conditions. After including the SiOx (inner)/SiONx (outer) passivation layers, the instability of the amorphous HIZO device was drastically improved by the suppression of the positive charge trapping sites under the NBTIS conditions. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3519987] All rights reserved.en_US
dc.language.isoenen_US
dc.publisherELECTROCHEMICAL SOC INCen_US
dc.subjectTHIN-FILM TRANSISTORSen_US
dc.subjectSEMICONDUCTORen_US
dc.titleThe Impact of Passivation Layers on the Negative Bias Temperature Illumination Instability of Ha-In-Zn-O TFTen_US
dc.typeArticleen_US
dc.relation.no2-
dc.relation.volume158-
dc.identifier.doi10.1149/1.3519987-
dc.relation.page115-118-
dc.relation.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETY-
dc.contributor.googleauthorKim, Sun-Il-
dc.contributor.googleauthorKim, Sang Wook-
dc.contributor.googleauthorKim, Chang Jung-
dc.contributor.googleauthorPark, Jin-Seong-
dc.relation.code2011205950-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE