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dc.contributor.author안진호-
dc.date.accessioned2018-04-13T01:57:15Z-
dc.date.available2018-04-13T01:57:15Z-
dc.date.issued2011-12-
dc.identifier.citationMicroelectronic Engineering, 2011, 88(9), p.2930-2933en_US
dc.identifier.issn0167-9317-
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S0167931711004412-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/65774-
dc.description.abstractThe effect of a two-dimensional Y2O3:Eu3+ photonic crystal (PC) pattern on the extraction efficiency of photoluminescence from the underlying Y2O3:Eu3+ thin-film phosphor was investigated. The photonic crystal structure was fabricated using a direct nano-imprint process with a Pechini-type Y2O3:Eu3+ sol as the nano-imprint resin and a patterned polydimethylsiloxane (PDMS) stamp as the mold. The elevated pressure and temperature of the nano-imprinting process converts the Y2O3:Eu3+ sol into a Y2O3:Eu3+ gel resulting in high definition transfer of the 2D patterns of the master template into the gel on top of the Y2O3:Eu3+ thin-film phosphor layer. The extraction efficiency of the 2D Y2O3:Eu3+ gel PC-assisted Y2O3:Eu3+ thin-film phosphor was approximately 3.7 times higher than a non-PC Y2O3:Eu3+ gel coated Y2O3:Eu3+ thin-film phosphor. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis work was supported by NBIT Fusion Technology R&D program of MKE (Korea) and a Platform Project grant (10033636-2010-11) supported by the Ministry of Knowledge Economy of Korea. This work was also supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0015035).en_US
dc.language.isoenen_US
dc.publisherElsevier Science B.V., Amsterdam.en_US
dc.subjectNano-imprinten_US
dc.subjectPDMS stampen_US
dc.subjectPhotonic crystalen_US
dc.subjectThin-film phosphoren_US
dc.subjectSol-gelen_US
dc.titleFabrication of 2D photonic crystal assisted Y2O3:Eu3+ thin-film phosphors by direct nano-imprintingen_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume88-
dc.identifier.doi10.1016/j.mee.2011.03.162-
dc.relation.page2930-2933-
dc.relation.journalMICROELECTRONIC ENGINEERING-
dc.contributor.googleauthorKo, K. Y.-
dc.contributor.googleauthorHer, E. J.-
dc.contributor.googleauthorNichols, W. T.-
dc.contributor.googleauthorLee, H.-
dc.contributor.googleauthorDo, Y. R.-
dc.contributor.googleauthorAhn, J.-
dc.relation.code2011206695-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjhahn-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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