Inverters Using Only N-Type Indium Gallium Zinc Oxide Thin Film Transistors for Flat Panel Display Applications
- Title
- Inverters Using Only N-Type Indium Gallium Zinc Oxide Thin Film Transistors for Flat Panel Display Applications
- Author
- 권오경
- Issue Date
- 2011-03
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50(3), P.03CB06
- Abstract
- Two inverter architectures are proposed to be integrated on panels for flat panel display applications using only n-type amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The proposed cross-coupled (CC) inverter uses the positive feedback effect of its CC structure to reduce the static current and increase the output voltage swing when using depletion mode n-type amorphous IGZO TFTs. The other proposed cross-coupled and bootstrapping (CCB) inverter also uses the cross-coupled structure and includes a capacitor for the bootstrapping effect to increase the operating frequency. The measured results show that the output voltage swing of the proposed CC inverter is from 0 to 14.50 V and that of the CCB inverter is from 0.15 to 14.57 V when VDD is 15 V at 20 kHz and the load capacitance is 103.0 pF. The power consumption of the CC and CCB inverters are 1.4 and 2.5mW, respectively, which are 29.3 and 53.4% of the power consumption of the ratioed inverter. (c) 2011 The Japan Society of Applied Physics
- Description
- F0004060
- URI
- http://iopscience.iop.org/article/10.1143/JJAP.50.03CB06/meta
- ISSN
- 0021-4922
- DOI
- 10.7567/JJAP.50.03CB06
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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