Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2018-04-03T01:07:48Z | - |
dc.date.available | 2018-04-03T01:07:48Z | - |
dc.date.issued | 2014-06 | - |
dc.identifier.citation | 대한전자공학회 학술대회.2014(06),p.237-240 | en_US |
dc.identifier.uri | http://www.dbpia.co.kr/Journal/ArticleDetail/NODE02438500 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/55457 | - |
dc.description.abstract | We proposed a novel self-reference sense amplifier scheme for spin-transfer-torque magneto-resistance random access memory by parallel write and read. The proposed sense amplifier is sensed by only two cycles of write operation, since a critical current density of a MTJ cell relate with write pulse width. We confirmed that the proposed circuit simulated using 0.18um CMOS technology in HSPICE has no error at tox variation with broad resistance distribution. | en_US |
dc.language.iso | ko_KR | en_US |
dc.publisher | 대한전자공학회 THE INSTITUTE OF ELECTRONICS ENGINEERS OF KOREA | en_US |
dc.title | STT-MRAM의 새로운 자기 기준 감지 회로 | en_US |
dc.title.alternative | Novel Self-Reference Sense Amplifier for STT-MRAM | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 37 | - |
dc.relation.page | 237-240 | - |
dc.relation.journal | 전자공학회논문지 | - |
dc.contributor.googleauthor | 길규현 | - |
dc.contributor.googleauthor | 최준태 | - |
dc.contributor.googleauthor | 송윤흡 | - |
dc.relation.code | 2014001104 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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