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Magnetic Tunnel Junction의 저항 산포 및 Sense Margin 분석

Title
Magnetic Tunnel Junction의 저항 산포 및 Sense Margin 분석
Other Titles
Analysis for Resistance Distribution and Sense Margin of Magnetic Tunnel Junction
Author
송윤흡
Issue Date
2014-06
Publisher
대한전자공학회 THE INSTITUTE OF ELECTRONICS ENGINEERS OF KOREA
Citation
대한전자공학회 학술대회,37(1),p.333-335
Abstract
MTJ resistance variation is a serious problem for commercializing STT-MRAM, since it narrows the sense margin between high and low resistance state during read operation. Hence, the study on MTJ resistance variation is essential for improving the sence margin and commercializing STT-MRAM. In this paper, we propose a investigation on MTJ characteristics and resistance variation withcombination of various causes. Also, we analysed the sense margin of MTJ according to the study of MTJ.
URI
http://www.dbpia.co.kr/Journal/ArticleDetail/NODE02438530http://hdl.handle.net/20.500.11754/55427
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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