Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-04-02T07:42:03Z | - |
dc.date.available | 2018-04-02T07:42:03Z | - |
dc.date.issued | 2011-11 | - |
dc.identifier.citation | Applied Physics Letters, Nov 2011, 99(19) | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://aip.scitation.org.ssl.access.hanyang.ac.kr/doi/full/10.1063/1.3659473 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/54943 | - |
dc.description.abstract | Nonvolatile memory devices were fabricated with core-shell CuInS2-ZnS quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA). Capacitance-voltage (C-V) measurements at 300K on the Al/CuInS2-ZnS QDs embedded in PMMA layer/p-Si device showed capacitance hysteresis behaviors with a flatband voltage shift. The memory window of the device increased with increasing applied sweep voltage and saturated at high electric fields due to the current leakage. Capacitance-time measurements showed that the retention time was larger than 1 x 10(5) s that was more than 10 years. The operating mechanisms for the devices are described on the basis of the C-V curves. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2010-0018877). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Amer INST Physics | en_US |
dc.subject | CDSE NANOPARTICLES | en_US |
dc.subject | BISTABILITY | en_US |
dc.title | Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer | en_US |
dc.type | Article | en_US |
dc.relation.no | 19 | - |
dc.relation.volume | 99 | - |
dc.identifier.doi | 10.1063/1.3659473 | - |
dc.relation.page | 1-1 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Han, Kyu Wan | - |
dc.contributor.googleauthor | Lee, Min Ho | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.contributor.googleauthor | Yun, Dong Yeol | - |
dc.contributor.googleauthor | Kim, Sung Woo | - |
dc.contributor.googleauthor | Kim, Sang Wook | - |
dc.contributor.googleauthor | 한규완 | - |
dc.contributor.googleauthor | 이민호 | - |
dc.contributor.googleauthor | 김태완 | - |
dc.contributor.googleauthor | 윤동열 | - |
dc.contributor.googleauthor | 김성우 | - |
dc.contributor.googleauthor | 김상욱 | - |
dc.relation.code | 2011200866 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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