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dc.contributor.author이상선-
dc.date.accessioned2018-04-02T07:22:28Z-
dc.date.available2018-04-02T07:22:28Z-
dc.date.issued2013-11-
dc.identifier.citation2013 International SoC Design Conference (ISOCC) SoC Design Conference (ISOCC), 2013, 2013(11), p.339-342(4쪽)en_US
dc.identifier.urihttp://ieeexplore.ieee.org/document/6864044/-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/54886-
dc.description.abstractThis paper proposed program voltage circuit techniques for 3D Solid State Drives (SSDs) with NAND flash memories. We reduced the charge pump stage using external high voltages of 12V and 5V with a proposed soft pre-charge high voltage switch to improve the power efficiency and area efficiency without a breakdown issue. The physical layout area in comparison with a conventional scheme and improves the power efficiency.en_US
dc.language.isoenen_US
dc.publisher대한전자공학회en_US
dc.subjectSolid State Drive (SSD)en_US
dc.subjectNAND flash memoryen_US
dc.subjectCharge Pumpen_US
dc.subjectBoost Converteren_US
dc.subjectHigh Voltage Switchen_US
dc.titleSoft Pre-charge H/V Switch for 3D Solid State Drive with NAND Flash Memoriesen_US
dc.title.alternativeV Switch for 3D Solid State Drive with NAND Flash Memoriesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/ISOCC.2013.6864044-
dc.relation.page1-4-
dc.contributor.googleauthorKim, Youngil-
dc.contributor.googleauthorChoi, Sungwook-
dc.contributor.googleauthorLee, Jaeho-
dc.contributor.googleauthorCho, Hyunchul-
dc.contributor.googleauthorWon, Samkyu-
dc.contributor.googleauthorChoi, Sungdae-
dc.contributor.googleauthorKim, Duckju-
dc.contributor.googleauthorKim, Taeyun-
dc.contributor.googleauthorPark, Gunwoo-
dc.contributor.googleauthorLee, Sangsun-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidssnlee-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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