Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-03-30T04:39:03Z | - |
dc.date.available | 2018-03-30T04:39:03Z | - |
dc.date.issued | 2014-08 | - |
dc.identifier.citation | Journal of Nanoscience and Nanotechnology, 2014, 14(8), P.6301-6304 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/jnn/2014/00000014/00000008/art00132 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/54256 | - |
dc.description.abstract | The p-i-n organic light-emitting devices (OLEDs) were fabricated by using a p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) layer and an n-type bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) doped 4,7-diphenyl-1,10-phenanthroline (BPhen) electron transport layer. The p-i-n OLEDs containing a p-type HAT-CN layer and BEDT-TTF-doped BPhen layer with a BEDT-TTF doping concentration of 1 wt.% demonstrated low operating voltage and the highest luminance efficiency. The enhancement of the luminance efficiency as well as a decrease in the operating voltage of the OLEDs was attributed to the improvement of the hole and electron injection due to the insertion of a HAT-CN layer and a BEDT-TTF-doped BPhen layer. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467). | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Scientific Publishers | en_US |
dc.subject | p-i-n Organic Light-Emitting Device | en_US |
dc.subject | Luminance Efficiency | en_US |
dc.subject | HAT-CN | en_US |
dc.subject | BEDT-TTF | en_US |
dc.title | Enhancement of the Efficiency in p-i-n Organic Light-Emitting Devices Containing Organic p-Type HAT-CN and n-Type Bis(ethylenedithio)-Tetrathiafulvalene Doped BPhen Layers | en_US |
dc.type | Article | en_US |
dc.relation.no | 8 | - |
dc.relation.volume | 14 | - |
dc.identifier.doi | 10.1166/jnn.2014.8305 | - |
dc.relation.page | 6301-6304 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Lee, K. S. | - |
dc.contributor.googleauthor | Cho, J. T. | - |
dc.contributor.googleauthor | Kim, T. W. | - |
dc.relation.code | 2014033921 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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