Self-forming Mn-based diffusion barriers on low-k substrates
- Title
- Self-forming Mn-based diffusion barriers on low-k substrates
- Author
- 최덕균
- Keywords
- CHEMICAL-VAPOR-DEPOSITION; CU DIFFUSION; ALLOY-FILMS; THERMAL-STABILITY; LAYER; METALLIZATION; INTERFACE; MANGANESE; TANX
- Issue Date
- 2014-07
- Publisher
- Japan Society of Applied Physics
- Citation
- Japanese Journal of Applied Physics, 2014, 53(8), P.08NL01
- Abstract
- In this work, we report on a self-forming barrier process in Cu-Mn alloys. Cu-Mn alloy films were directly deposited onto low-k substrates by co-sputtering and then subjected to an annealing treatment at various temperatures. X-ray diffraction patterns obtained for the Cu-Mn alloys showed Cu(111), Cu(200), and Cu(220) peaks, while transmission electron microscopy images revealed that a uniform Mn-based interlayer self-formed at the Cu-Mn/low-k interface after annealing. In order to evaluate the barrier properties of the Mn-based interlayer, thermal stability measurements were carried out with the low-k dielectrics. The Cu-Mn alloy showed improved thermal stability when compared to a pure Cu reference sample. The chemical composition of the self-formed interlayers on the low-k substrates was ultimately investigated by X-ray photoelectron spectroscopy analysis. Our results show that the composition of the self-formed interlayers depends on the oxide and carbon concentrations in the low-k material. (C) 2014 The Japan Society of Applied Physics
- URI
- http://iopscience.iop.org/article/10.7567/JJAP.53.08NL01/metahttp://hdl.handle.net/20.500.11754/53517
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.7567/JJAP.53.08NL01
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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