Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2018-03-26T15:12:21Z | - |
dc.date.available | 2018-03-26T15:12:21Z | - |
dc.date.issued | 2014-12 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS,권: 14,호: 12,페이지: 1767-1770 | en_US |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.issn | 1878-1675 | - |
dc.identifier.uri | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001938777 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/52736 | - |
dc.description.abstract | We reported the effects on the electrical behavior of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) after introducing various positions and sizes of Au nanoparticles (NPs) in the channel layer. These TFTs showed an off-current increase and threshold voltage (Vth) shift compared to conventional a-IGZO TFTs. The effects of Au NPs are explained to form the carrier conduction path which causes the current leakage in the channel layer, and act as either electron injection sites or trap sites. Therefore, this study demonstrates that the optimized control of size and position of Au NPs in the channel layer is crucial for its application in the electrical stability improvement and Vth control of a-IGZO TFTs. (C) 2014 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0015436). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS | en_US |
dc.subject | a-IGZO | en_US |
dc.subject | TFTs | en_US |
dc.subject | Au | en_US |
dc.subject | Nanoparticles | en_US |
dc.title | Electrical behavior of amorphous indium-gallium-zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 14 | - |
dc.identifier.doi | 10.1016/j.cap.2014.09.027 | - |
dc.relation.page | 1767-1770 | - |
dc.relation.journal | CURRENT APPLIED PHYSICS | - |
dc.contributor.googleauthor | Yang, Heewang | - |
dc.contributor.googleauthor | Cho, Byungsu | - |
dc.contributor.googleauthor | Park, Joohyun | - |
dc.contributor.googleauthor | Ham, Giyul | - |
dc.contributor.googleauthor | Seo, Hyungtak | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.relation.code | 2014028061 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
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