Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 장재영 | - |
dc.date.accessioned | 2018-03-26T08:16:48Z | - |
dc.date.available | 2018-03-26T08:16:48Z | - |
dc.date.issued | 2012-01 | - |
dc.identifier.citation | Journal of materials chemistry, 2012, 22(3), P.1054-1060 | en_US |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2012/JM/C1JM14091D#!divAbstract | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/52629 | - |
dc.description.abstract | Here we describe the use of photocurable poly(vinyl cinnamate) (PVCN) as a gate dielectric in high-performance cylindrical organic field-effect transistors (OFETs) with high bending stability. A smooth-surface metallic fiber (Al wire) was employed as a cylindrical substrate, and polymer dielectrics (PVCN and poly(4-vinyl phenol) (PVP)) were formed via dip-coating. The PVCN and PVP dielectrics deposited on the Al wire and respectively cross-linked via UV irradiation and thermal heating were found to be very smooth and uniform over the entire coated area. Pentacene-based cylindrical OFETs with the polymer dielectrics exhibited high-performance hysteresis-free operation. Devices made with the PVCN dielectric showed superior bending stability than devices made with PVP dielectrics or previously reported cylindrical OFETs due to the good flexibility of the PVCN dielectric. The devices maintained their excellent performance under bending at a bending radius comparable to the lowest value reported for planar OFETs. | en_US |
dc.description.sponsorship | This work was supported by a grant from the Korea Science and Engineering Foundation (KOSEF) and National Research Foundation of Korea as a part of Global Frontier Research Center for Advanced Soft Electronics, funded by the Korea government (MEST) (20110000330). J. Jang and S. Nam contributed equally to this work. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Royal Society of Chemistry | en_US |
dc.subject | THIN-FILM TRANSISTORS | en_US |
dc.subject | E-TEXTILES | en_US |
dc.subject | FIBER | en_US |
dc.subject | PERFORMANCE | en_US |
dc.subject | PENTACENE | en_US |
dc.title | Photocurable polymer gate dielectrics for cylindrical organic field-effect transistors with high bending stability | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 22 | - |
dc.identifier.doi | 10.1039/c1jm14091d | - |
dc.relation.page | 1054-1060 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.contributor.googleauthor | Jang, Jaeyoung | - |
dc.contributor.googleauthor | Nam, Sooji | - |
dc.contributor.googleauthor | Hwang, Jihun | - |
dc.contributor.googleauthor | Park, Jong-Jin | - |
dc.contributor.googleauthor | Im, Jungkyun | - |
dc.contributor.googleauthor | Park, Chan Eon | - |
dc.contributor.googleauthor | Kim, Jong Min | - |
dc.relation.code | 2012205376 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ENERGY ENGINEERING | - |
dc.identifier.pid | jyjang15 | - |
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