The Influence of Oxygen High-Pressure Annealing on the Performance and Bias Instability of Amorphous Ge-In-Ga-O Thin-Film Transistors
- Title
- The Influence of Oxygen High-Pressure Annealing on the Performance and Bias Instability of Amorphous Ge-In-Ga-O Thin-Film Transistors
- Author
- 박진성
- Keywords
- Amorphous oxide semiconductor (AOS); high-pressure annealing (HPA); positive-bias temperature stress (PBTS); thin-film transistors (TFTs)
- Issue Date
- 2014-12
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES,권: 61 ,호: 12 ,페이지: 4132-4136
- Abstract
- The effects of oxygen high-pressure annealing (O-2 HPA) on the performance and instability of amorphous Ge-In-Ga-O (a-GIGO) thin-film transistors (TFTs) were examined. The TFTs with HPA under 30 atm O-2 ambient exhibited consistently better stability against the applied temperature stress and positive gate bias stress. We demonstrate that the superior stability of the HPA-treated device can be correlated with the evolution of electronic structure in a-GIGO thin films, as measured by spectroscopic ellipsometry, which reveals the significantly reduced band edge states below the conduction band by the O-2 HPA treatment. Based on the Meyer-Neldel rule, the total density of subgap states energy distribution, including the interfacial and semiconductor bulk trap densities, was also extracted and compared, which can support the experimental observatio
- URI
- https://scholar.google.co.kr/scholar?q=The+Influence+of+Oxygen+High-Pressure+Annealing+on+the+Performance+and+Bias+Instability+of+Amorphous+Ge-In-Ga-O+Thin-Film+Transistors&hl=ko&as_sdt=0&as_vis=1&oi=scholart&sa=X&ved=0ahUKEwi7yrDdotnYAhXDi5QKHTWaDQEQgQMIIzAAhttp://hdl.handle.net/20.500.11754/51992
- ISSN
- 0018-9383; 1557-9646
- DOI
- 10.1109/TED.2014.2359469
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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