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COLLEGE OF ENGINEERING[S](공과대학)
MATERIALS SCIENCE AND ENGINEERING(신소재공학부)
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Results 1-4 of 4 (Search time: 0.001 seconds).
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2020-10
Optically excited threshold switching synapse characteristics on nitrogen-doped graphene oxide quantum dots
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2020-05
Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse
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2020-10
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
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2020-12
Partially Oxidized MXene Ti3C2Tx Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics
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Ar ions plasma
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Diffusive memristor
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diffusive memristors; electronic ...
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electronic synapse
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emerging memories
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Flexible substrate
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Graphene oxide
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Heterostructure thin film
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Light stimulation
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memristor
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-Date issued
4
2020
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