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Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse

Title
Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse
Author
안드레
Keywords
Ar ions plasma; Surface modification; Heterostructure thin film; Flexible substrate; Synapse memristor
Issue Date
2020-05
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v. 822, article no. 153625
Abstract
The enhanced resistive switching (RS) characteristics of the flexible TaOx/InGaZnO (IGZO)-based bilayer memristor deposited on the polyethylene terephthalate (PET) substrate are demonstrated in the Ti/TaOx/IGZO/Pt heterostructure. The Ar ion (Ar+) plasma treatment was intentionally induced on the surface of TaOx/IGZO thin films to improve RS filament consistency and results displayed the improved uniform RS behavior of the plasma-treated device. Further, this device is investigated as an artificial electronic synapse and important synaptic functions such as long term potentiation (LTP), long term depression (LTD), paired-pulse facilitation (PPF), post-tetanic potential (PTP) and spike-timing dependent plasticity (STDP) characteristics are well emulated and analogues to the biological synapse behavior. The bending test to assess influence of stress/strain induction on the RS properties is also demonstrated. Further, bulk and angle-resolved x-ray photoelectron spectroscopy (XPS) is utilized to shed a light on the influence of Ar+ plasma on the surface of TaOx/IGZO thin films, as well as AFM analysis, and this insight is argued in the elaborated RS mechanism discussion.
URI
https://www.sciencedirect.com/science/article/pii/S0925838819348716?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/166515
ISSN
0925-8388; 1873-4669
DOI
10.1016/j.jallcom.2019.153625
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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