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COLLEGE OF ENGINEERING[S](공과대학)
MATERIALS SCIENCE AND ENGINEERING(신소재공학부)
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2017-05
Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics
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2011-05
The effects of post-annealing on the performance of ZnO thin film transistors
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2015-11
Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics
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Annealing
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Hafnium aluminum oxide
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Thin film transistor
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Zinc oxide
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