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Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics

Title
Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics
Author
최창환
Keywords
TFET; Subthreshold swing; Hafnium aluminum oxide; Atomic layer deposition
Issue Date
2017-05
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v. 178, page. 266-270
Abstract
We have studied the electrical characteristics of both n-type and p-type fully depleted silicon on insulator (FDSOI) tunnel field-effect transistors (TFETs) by modulating Al2O3 fraction (25%, 50%) within atomic layer deposited HfAlOx gate dielectric. Compared to HfO2 alone, lower subthreshold swing (S.S), higher I-on,/I-off, and stronger threshold voltage (V-th) immunity against electrical stress are obtained for both n-type and p-type TFETs by adopting nano-laminated atomic layer deposited HfAlOx, attributed to the increased band gap and interfacial layer scavenging effect. (C) 2017 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/abs/pii/S0167931717302368?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/114039
ISSN
0167-9317; 1873-5568
DOI
10.1016/j.mee.2017.05.039
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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