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COLLEGE OF ENGINEERING[S](공과대학)
MATERIALS SCIENCE AND ENGINEERING(신소재공학부)
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Results 1-10 of 11 (Search time: 0.002 seconds).
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Issue Date
Title
Author(s)
2018-01
Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device
최창환
2018-04
Analysis of Anomalously Large RTS Noise Amplitudes in Tunneling Field-effect Transistors
최창환
2018-02
Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
최창환
2018-03
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure
최창환
2018-08
Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing
최창환
2018-08
Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device
최창환
2018-09
In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
최창환
2018-11
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
최창환
2018-04
Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET
최창환
2018-10
Thin Si wafer substrate bonding and de-bonding below 250 degrees C for the monolithic 3D integration
최창환
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RRAM
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ALD
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ALD HfO2
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Analogue switching
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ARRAYS
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band-to-band tunneling (BTBT)
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CELL
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CURRENT DEGRADATION
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De-bonding
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Direct bonding
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