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COLLEGE OF ENGINEERING[S](공과대학)
MATERIALS SCIENCE AND ENGINEERING(신소재공학부)
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Results 31-40 of 106 (Search time: 0.003 seconds).
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Issue Date
Title
Author(s)
2012-10
Effect of Al incorporation on the performance and reliability of p-type metal-oxide-semiconductor field effect transistors
최창환
2012-10
The electrical and structural properties of HfO2/SrTiO3 stacked gate dielectric with TiN metal gate electrode
최창환
2012-10
Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress
최창환
2012-01
Thickness and material dependence of capping layers on flatband voltage (V-FB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications
최창환
2012-06
Plasma atomic layer deposited TiN metal gate for three dimensional device applications: Deposition temperature, capping metal and post annealing
최창환
2012-06
SnO2 encapsulated TiO2 hollow nanofibers as anode material for lithium ion batteries
최창환
2013-03
Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices
최창환
2012-08
Fabrication, structure, and photoluminescence of GeO2/ZnO core-shell nanorods
최창환
2011-04
Bias dependence of PBTI degradation mechanism in metal-oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric
최창환
2012-10
Remote NH3 plasma passivation on the interface between the remote plasma Al2O3 atomic layer deposited and 6H SiC substrate
최창환
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-Subject
5
Resistive switching
4
neuromorphic computing
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resistive switching
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RRAM
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Sputtering
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Annealing
3
Atomic layer deposition
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boron nitride
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DEVICES
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FIELD-EFFECT TRANSISTORS
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-Date issued
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2020 - 2022
73
2011 - 2019
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