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Browsing "MATERIALS SCIENCE AND ENGINEERING(신소재공학부)" byAuthor최창환
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Showing results 91 to 106 of 106
Issue Date
Title
Author(s)
2019-07
Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device
최창환
2012-09
A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal-Oxide-Semiconductor Device Integration Applications
최창환
2017-05
Suppressed charge trapping characteristics of (NH4)(2)S-x passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric
최창환
2021-02
Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2 Material
최창환
2012-02
Suppressed Thermally Induced Flatband Voltage Instabilities with Binary Noble Metal Gated Metal-Oxide-Semiconductor Capacitors
최창환
2016-10
Suppression of boron diffusion using carbon co-implantation in DRAM
최창환
2020-07
Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering
최창환
2020-10
Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor
최창환
2016-09
Synthesis of P-Type ZnO Thin Films with Arsenic Doping and Post Annealing
최창환
2019-08
Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics
최창환
2012-01
Thickness and material dependence of capping layers on flatband voltage (V-FB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications
최창환
2018-10
Thin Si wafer substrate bonding and de-bonding below 250 degrees C for the monolithic 3D integration
최창환
2021-01
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
최창환
2019-04
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
최창환
2020-08
Two-terminal artificial synapse with hybrid organic-inorganic perovskite (CH3NH3)PbI3 and low operating power energy (similar to 47 fJ/mu m(2))
최창환
2018-04
Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET
최창환
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