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Suppressed charge trapping characteristics of (NH4)(2)S-x passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric

Title
Suppressed charge trapping characteristics of (NH4)(2)S-x passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric
Author
최창환
Keywords
Sulfur passivation; Interface trap density; Charge trapping; GaN device
Issue Date
2017-05
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v. 178, page. 240-244
Abstract
The charge trapping behaviors of ammonium poly-sulfide,(NH4)(2)S-x.,passivated GaN MOS device with atomic layer deposited HfAlOx. gate dielectric and DC-sputtered TiN gate electrode are investigated and compared with those of GaN MOS device with hydrochloric acid, HCI, passivation. Compared to non-S passivated device, higher peak capacitance (>20% @1 MHz), reduced frequency dispersion (similar to 30% down arrow) lower hysteresis (similar to 34% down arrow), higher breakdown (1.3x), lower stress induced flat-band voltage (V-FB) shift (similar to 30% down arrow), and lower interface state density (D-it) stronger immunity D-it generation (Delta D-it) against gate bias voltage are attained with S-passivated device. Further improved characteristics are observed with post deposition annealing at 400 degrees C for 10 min. These behaviors are mainly attributed to higher bond strength energy of S-O and S-N than those of CI-O and Cl-N bonds. (C) 2017 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/abs/pii/S0167931717302241?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/114038
ISSN
0167-9317; 1873-5568
DOI
10.1016/j.mee.2017.05.027
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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