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dc.contributor.author정정화-
dc.date.accessioned2018-03-23T05:02:42Z-
dc.date.available2018-03-23T05:02:42Z-
dc.date.issued2012-12-
dc.identifier.citationJournal of semiconductor technology and science, 2012, 12(4), P.397-404, 8P.en_US
dc.identifier.issn1598-1657-
dc.identifier.urihttp://koreascience.or.kr/article/ArticleFullRecord.jsp?cn=E1STAN_2012_v12n4_397-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/51228-
dc.description.abstractThermal generation by power dissipation of the highly integrated System on Chip (SoC) device is irregularly distributed on the intra chip. It leads to thermal increment of the each thermally different region and effects on the propagation timing; consequently, the timing violation occurs due to the misestimated number of buffers. In this paper, the timing budgeting methodology considering thermal variation which contains buffer insertion with wire segmentation is proposed. Thermal aware LUT modeling for cell intrinsic delay is also proposed. Simulation results show the reduction of the worst delay after implementing thermal aware buffer insertion using by proposed wire segmentation up to 33% in contrast to the original buffer insertion. The error rates are measured by SPICE simulation results.en_US
dc.description.sponsorshipThis work was sponsored by ETRI SW-SoC R&BD Center, Human Resource Development Project. This research was also supported by the MKE (The Ministry of Knowledge Economy), Korea, under the ITRC(Information Technology Research Center) support program supervised by the NIPA(National IT Industry Promotion Agency) (NIPA-2012-H0301-12-1011).en_US
dc.language.isoenen_US
dc.publisherThe Institute of Electronics Engineers of Koreaen_US
dc.subjectBuffer insertionen_US
dc.subjectthermal variationen_US
dc.subjectcell delayen_US
dc.subjectlibrary characterizationen_US
dc.titleThermal Aware Buffer Insertion in the Early Stage of Physical Designsen_US
dc.typeArticleen_US
dc.relation.no4-
dc.relation.volume12-
dc.identifier.doi10.5573/JSTS.2012.12.4.397-
dc.relation.page397-404-
dc.relation.journalJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.contributor.googleauthorKim, Jaehwan-
dc.contributor.googleauthorAhn, Byung-gyu-
dc.contributor.googleauthorKim, Minbeom-
dc.contributor.googleauthorChong, Jongwha-
dc.relation.code2012247487-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjchong-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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