Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions
- Title
- Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions
- Author
- 이승백
- Keywords
- PERPENDICULAR-ANISOTROPY; EFFECT TRANSISTOR; PLASMA; ELEMENTS
- Issue Date
- 2012-12
- Publisher
- American Vacuum Society; 1999
- Citation
- Journal of Vacuum Science & Technology. B, 2012, 30(6), P.06FA01
- Abstract
- The authors have demonstrated fabrication of 30 nm diameter perpendicular anisotropy magnetic tunnel junctions (MTJs) using negative electron-beam resist (NER) as the ion beam etching (IBE) hard mask. The NER pillar of 30 nm diameter and 105 nm thickness was fabricated by electron-beam lithography. The redeposition of the MTJ etching debris generated during the IBE on the outer surface of the NER pillar increased the lateral etch resistance of the resist polymer, allowing the edge profile to remain constant for the duration of the MTJ etching, resulting in a vertical MTJ sidewall profile. A multistep IBE (repetition of 45 degrees primary etching and 30 degrees secondary etching) was conducted to reduce the MTJ sidewall redeposition while reducing mechanical damage. The measurement results showed a tunnel magneto-resistance ratio of 22% at 30 nm junction diameter. (C) 2012 American Vacuum Society. [http://dx.doi.org.access.hanyang.ac.kr/10.1116/1.4767123]
- URI
- https://avs.scitation.org/doi/10.1116/1.4767123http://hdl.handle.net/20.500.11754/51087
- ISSN
- 1071-1023; 2166-2746
- DOI
- 10.1116/1.4767123
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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