Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2018-03-23T01:46:24Z | - |
dc.date.available | 2018-03-23T01:46:24Z | - |
dc.date.issued | 2013-11 | - |
dc.identifier.citation | Metals and Materials International, 2013, 19(6), P.1309-1316 | en_US |
dc.identifier.issn | 1598-9623 | - |
dc.identifier.issn | 2005-4149 | - |
dc.identifier.uri | https://link.springer.com/article/10.1007%2Fs12540-013-6026-7 | - |
dc.description.abstract | Zinc sulfide (ZnS) thin films were deposited by radio-frequency (RF) magnetron sputtering. The effects of the process parameters such as deposition time and RF-power, as well as of post deposition annealing under oxygen containing atmospheres, on the material properties of ZnS films have been investigated. X-ray diffraction analysis reveals out that the as-deposited ZnS films preferred (002) hexagonal wurtzite and (111) cubic zinc blend (111) at 28.60A degrees, while a thicker ZnS film has additional hexagonal wurtzite (100), (110), and (200) planes coexisting with the preferred oriented-planes, suggesting that the thickness is dependent on the growth of ZnS. After annealing, ZnO phases were detected, indicating island-like grain growth on the surface of the ZnS film. By increasing the deposition time and the RF power, the optical band gap energy (E-g) of the ZnS film changes from 4.13 to 3.87 eV, indicating the presence of lower E-g with thicker ZnS film. The lower E-g (similar to 3.27 eV) value of the annealed films is attributed to the ZnO transition. Unlike bulk ZnS material (Zn/S similar to 1.08), deposited ZnS thin film has Zn-rich and S-deficient composition (Zn/S similar to 1.28). However, the Zn/S ratio is closer to the ideal value when there is a longer deposition time or higher RF-power. | en_US |
dc.description.sponsorship | This study was supported by the research fund of Hanyang University (HY-2011-00000001061). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Korean INST Metals Materials | en_US |
dc.subject | ZnS | en_US |
dc.subject | solar cells | en_US |
dc.subject | annealing | en_US |
dc.subject | phase transformation | en_US |
dc.subject | scanning electron microscopy | en_US |
dc.title | Structural, optical and chemical analysis of zinc sulfide thin film deposited by RF-mganetron sputtering and post deposition annealing | en_US |
dc.type | Article | en_US |
dc.relation.volume | 19 | - |
dc.identifier.doi | 10.1007/s12540-013-6026-7 | - |
dc.relation.page | 1309-1316 | - |
dc.relation.journal | METALS AND MATERIALS INTERNATIONAL | - |
dc.contributor.googleauthor | Yoo, Dongjun | - |
dc.contributor.googleauthor | Choi, Moon Suk | - |
dc.contributor.googleauthor | Heo, Seung Chan | - |
dc.contributor.googleauthor | Chung, Chulwon | - |
dc.contributor.googleauthor | Kim, Dohyung | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2013011279 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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