Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안진호 | - |
dc.date.accessioned | 2018-03-22T02:10:03Z | - |
dc.date.available | 2018-03-22T02:10:03Z | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | SCIENCE OF ADVANCED MATERIALS, v. 8, NO 4, Page. 878-883 | en_US |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.issn | 1947-2943 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/sam/2016/00000008/00000004/art00028;jsessionid=nk7a0qanu51b.x-ic-live-03 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/50302 | - |
dc.description.abstract | Undoped and Al-doped nano-ZnO thin films are grown on sapphire substrates by a sol gel method. Their structural, morphological, and optical properties have been investigated with respect to post -annealing temperatures of 500 degrees C and 700 degrees C. The undoped and Al-doped nano-ZnO films exhibit a dominant (002) XRD peak. By increasing the annealing temperature of ZnO from 500 degrees C to 700 degrees C, the homogeneously distributed granular nano-grains with 20-40 nm diameter are changed into faceted grains with 30-80 nm. The photoluminescence spectra show strong emission peak around 3.26 eV indicating a direct band gap recombination. ascribed to free exiton emission. The Raman spectra exhibit a strong A(1) (LO) peak and its shift with increasing annealing temperature due to strain of undoped and Al-doped ZnO thin films concurs with the broadening of XRD peak. | en_US |
dc.description.sponsorship | This work was supported by Basic Science Research Program (2009-0083540, 2012R1A6A1029029) and Nanomaterial Technology Development Program (2012M3A7B4034985) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education and by the Ministry of Science, ICT and Future Planning. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | ZnO | en_US |
dc.subject | Al-Doped ZnO | en_US |
dc.subject | Sol-Gel Method | en_US |
dc.subject | Annealing Effect | en_US |
dc.subject | Structural Property | en_US |
dc.subject | Optical Property | en_US |
dc.title | Influence of Annealing Temperature on Structural and Optical Properties of Undoped and Al-Doped Nano-ZnO Films Prepared by Sol–Gel Method | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1166/sam.2016.2548 | - |
dc.relation.page | 878-883 | - |
dc.relation.journal | SCIENCE OF ADVANCED MATERIALS | - |
dc.contributor.googleauthor | Gevorgyan, Vladimir | - |
dc.contributor.googleauthor | Reymers, Anna | - |
dc.contributor.googleauthor | Arzakantsyan, Mikayel | - |
dc.contributor.googleauthor | Lee, Kilbock | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.contributor.googleauthor | Park, In-Sung | - |
dc.relation.code | 2016006391 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jhahn | - |
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