Only the chemical state of Indium changes in Mn-doped In3Sb1 Te-2 (Mn: 10 at.%) during multi-level resistance changes

Abstract

We fabricated and characterized the material with Mn (10 at.%: atomic percent) doped In3Sb1Te2 (MIST) using co-sputtering and synchrotron radiation, respectively. The MIST thin film showed phase-changes at 97 and 320 degrees C, with sheet resistances of similar to 10 k ohm sq (amorphous), similar to 0.2 k ohm sq (first phase-change), and similar to 10 ohm sq (second phase-change). MIST did not exhibit any chemical separation or increased structural instability during either phase-change, as determined with high-resolution x-ray photoelectron spectroscopy. Chemical state changes were only depended for In without concomitant changes of Sb and Te. Apparently, doped Mn atoms can be induced with movement of only In atoms.