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dc.contributor.author백상현-
dc.date.accessioned2018-03-20T06:35:18Z-
dc.date.available2018-03-20T06:35:19Z-
dc.date.issued2016-02-
dc.identifier.citationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v. 63, No. 1, Page. 385-391en_US
dc.identifier.issn0018-9499-
dc.identifier.issn1558-1578-
dc.identifier.urihttp://ieeexplore.ieee.org/abstract/document/7407517/-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/49658-
dc.description.abstractTwo types of clock networks including clock mesh and a buffered clock tree in a daisy-chain style were utilized to synchronize 5 DFF chains and fabricated in a 28 nm bulk CMOS technology. Alpha and proton particles did not trigger any errors indicating the significant single event tolerance of these clock networks. Heavy ion results for the data input pattern of checkerboard (alternate 1 and 0) are presented showing few occurrences of burst errors induced by single event transients (SETs) in the buffered clock tree at relatively high LET values. The same phenomena were observed in laser tests. Clock mesh is therefore proven to be less sensitive to SETs, if pre-mesh drivers do not generate transients. Otherwise, clock mesh possesses lower tolerance, as demonstrated in previous work. Moreover, these burst errors occurred (1) simultaneously in a DFF chain and its subsequent chains, or (2) in a single chain with subsequent chains unaffected. The distinct mechanisms of these burst errors were found to be the electrical masking effect of the daisy-chain clock buffers.en_US
dc.description.sponsorshipThis work was supported in part by the Natural Science and Engineering Research Council of Canada and in part by CMC Microsystems.en_US
dc.language.isoen_USen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectClock jitteren_US
dc.subjectclock meshen_US
dc.subjectclock raceen_US
dc.subjectradiation hardeningen_US
dc.subjectsingle event effecten_US
dc.subjectsoft erroren_US
dc.titleSingle-Event Transient Sensitivity Evaluation of Clock Networks at 28-nm CMOS Technologyen_US
dc.typeArticleen_US
dc.relation.no1-
dc.relation.volume63-
dc.identifier.doi10.1109/TNS.2015.2509443-
dc.relation.page385-391-
dc.relation.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE-
dc.contributor.googleauthorWang, H. -B-
dc.contributor.googleauthorMahatme, N-
dc.contributor.googleauthorChen, L-
dc.contributor.googleauthorNewton, M-
dc.contributor.googleauthorLi, Y. -Q-
dc.contributor.googleauthorLiu, R-
dc.contributor.googleauthorChen, M-
dc.contributor.googleauthorBhuva, B. L-
dc.contributor.googleauthorLilja, K-
dc.contributor.googleauthorBaeg, S-
dc.contributor.googleauthorWen, S. -J-
dc.contributor.googleauthorWong, R-
dc.contributor.googleauthorFung, R-
dc.relation.code2016002576-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pidbau-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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