Heteroepitaxial Growth of GaN on Various Powder Compounds (AlN, LaN, TiN, NbN, ZrN, ZrB2, VN, BeO) by Hydride Vapor Phase Epitaxy
- Title
- Heteroepitaxial Growth of GaN on Various Powder Compounds (AlN, LaN, TiN, NbN, ZrN, ZrB2, VN, BeO) by Hydride Vapor Phase Epitaxy
- Author
- 박진섭
- Keywords
- GaN; heteroepitaxy; powder; hydride vapor phase epitaxy
- Issue Date
- 2012-04
- Publisher
- Springer Science and Business Media
- Citation
- Electronic materials letters, 2012, 88(2), P.135-139
- Abstract
- We investigated the nucleation and growth behavior of GaN on various powders by hydride vapor phase epitaxy. In relative comparison, the nucleation tendency of GaN on each powder can be summarized as AlN > LaN, TiN, NbN > ZrN > ZrB2 > VN, BeO, indicating that the number of nucleation sites increased from right to left. LaN and NbN have not yet been reported as buffer materials for GaN growth. Of these, NbN is expected to be a good buffer material because the interatomic distance on the NbN (111) plane has only 2% difference from that on the GaN (0001) plane.
- URI
- https://link.springer.com/article/10.1007%2Fs13391-012-1076-4http://hdl.handle.net/20.500.11754/49653
- ISSN
- 1738-8090
- DOI
- 10.1007/s13391-012-1076-4
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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