Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최덕균 | - |
dc.date.accessioned | 2018-03-20T06:10:06Z | - |
dc.date.available | 2018-03-20T06:10:06Z | - |
dc.date.issued | 2014-03 | - |
dc.identifier.citation | Journal of electronic materials, Vol.43 No.5 [2014], pp. 1384-1388 | en_US |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | http://link.springer.com/article/10.1007%2Fs11664-014-3083-8 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/49609 | - |
dc.description.abstract | Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I-V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and TaO (x) was examined in a Pt/a-IGZO/TaO (x) /Al2O3/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the TaO (x) , an oxygen-rich TaO (x) interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and TaO (x) . The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about 10(1) at a read voltage of -0.5 V, and the rectifying ratio was about 10(3) at +/- 2 V. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) Grant fundedby the Korea government (MSIP) (2005-0049407, ERC Program, Center for Materials and Processes of Self-Assembly). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer Science + Business Media | en_US |
dc.subject | Resistive switching | en_US |
dc.subject | self-rectifying | en_US |
dc.subject | current hysteresis | en_US |
dc.subject | ReRAM | en_US |
dc.subject | interface | en_US |
dc.subject | amorphous In-Ga-Zn-O | en_US |
dc.title | Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnO | en_US |
dc.type | Article | en_US |
dc.relation.volume | 43 | - |
dc.identifier.doi | 10.1007/s11664-014-3083-8 | - |
dc.relation.page | 1384-1388 | - |
dc.relation.journal | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.contributor.googleauthor | Lee, J. W. | - |
dc.contributor.googleauthor | Kwon, H. M. | - |
dc.contributor.googleauthor | Kim, M. H. | - |
dc.contributor.googleauthor | Lee, S. R. | - |
dc.contributor.googleauthor | Kim, Y. B. | - |
dc.contributor.googleauthor | Choi, D. K. | - |
dc.contributor.googleauthor | 최덕균 | - |
dc.relation.code | 2014033040 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | duck | - |
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